3rd International Workshop on Atomic Layer Etching
24th – 25th July 2016, Dublin, Ireland
Atomic Layer Etching
Extending Moore’s law beyond the 10nm node will increasingly rely on high precision processes employing new materials with high-quality surfaces. Atomic layer etching & atomic layer clean technology is a promising pathway to achieve these fundamental requirements.
The Atomic Layer Etching Workshop offers a one-day focus on the science and technology of atomic layer etching of thin films. The ALE Workshop runs in parallel with the first day of the 16th International Conference on Atomic Layer Deposition (ALD 2016). Both are preceded by a one day tutorial session to provide the scientific principles of this burgeoning field. It will be held in the Convention Centre, Dublin, Ireland, on 24-25 July 2016.
Atomic Layer Etching (ALE) is used to remove ultrathin layers of material in semiconductor and thin-film device applications. Both isotropic and highly-anisotropic etching can be achieved. In common with ALD, ALE operates on a multi-step, self-limiting surface reactions which enable the repetitive removal of material in the range of 1-monolayer per cycle.
ALE is finding application in corner selectivity of self-aligned-contacts, damage mitigation of source/drain contact etching steps, etching of non-volatile metals in MRAM structures, and profile control in VRAM devices and has been proposed for gate-size tailoring in future all-around-gate transistor designs. It is of interest for any advanced technology that requires control of film structure in the nanometer or sub-nanometer scale.
Following last year’s ALE Workshop with 280 participants this year’s event will run in parallel with the ALD Conference to facilitate cross-over science and engineering of atomic layer control for thin-film engineering.
Ankur Agarwal (Applied Materials)
Steven George, University of Colorado, Boulder
Dennis van Dorp, IMEC
Akira Koshiishi, Tokyo Electron
Kazunori Shinoda, Hitachi Hi-Tech
Standard Registration: until 17 June 2016
Late Registration: 18 June to 18 July 2016
You can register for ALD2016 (one day or three days, 25-27 July) and the Atomic Layer Etch workshop (one day, 25 July), as well as for the joint ALD/ALE tutorial (half-day, 24 July). As part of the registration process and for tracking purposes, we ask that you indicate your primary interest in Atomic Layer Deposition or Atomic Layer Etching.
Packages are available for sponsorship of the Atomic Layer Etch workshop. Please download the prospectus for information.
Abstract submission for ALE closed on Friday 18th March and authors will be notified by Monday 2nd May.